The ficonTEC ELIAS series are machines for annealing of wafer-based and thin-film microelectronic devices. With further downscaling of CMOS structures below the 60 nm node, Excimer lasers with their unrivalled low pulse-to-pulse energy fluctuations, low coherence and conjugated beam shaping possibilities have encountered increasing interest from applications in CMOS, PMOS and other related fields. In PMOS frontside and backside applications, XeCl radiation at 308 nm has been tested and has found its way into industrial production where the benefits of this technique balance well with the requirements of ever decreasing production costs. Excellent control of material characteristics can be achieved through proper selection of laser parameters, which directly influence the laser material interaction. The energy density scales with the field size on substrate and can be scaled up to several Joules per square centimeter, enabling melt and non-melt annealing techniques for various applications specifically in the PMOS field.